Component information
NGTB10N60R2DT4G
NGTB10N60R2DT4G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; Single IGBTs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; Single IGBTs
- Input Type
- Standard
- Manufacturer
- onsemi
- Gate Charge
- 53 nC
- Packaging
- Tape & Reel (TR)
- Td (on/off) @ 25°C
- 48ns/120ns
- Part Status
- Obsolete
- Test Condition
- 300V, 10A, 30Ohm, 15V
- Voltage - Collector Emitter Breakdown (Max)
- 600 V
- Reverse Recovery Time (trr)
- 90 ns
- Current - Collector (Ic) (Max)
- 20 A
- Operating Temperature
- 175°C (TJ)
- Current - Collector Pulsed (Icm)
- 40 A
- Mounting Type
- Surface Mount
- Vce(on) (Max) @ Vge, Ic
- 2.1V @ 15V, 10A
- Package / Case
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Power - Max
- 72 W
- Supplier Device Package
- DPAK
- Switching Energy
- 412µJ (on), 140µJ (off)
- Base Product Number
- NGTB10
Documentation and references
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