Component information
NJD35N04T4G
NJD35N04T4G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 2000 @ 2A, 2V
- Mfr
- onsemi
- Power - Max
- 45 W
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Frequency - Transition
- 90MHz
- Part Status
- Active
- Operating Temperature
- -65°C ~ 150°C (TJ)
- Transistor Type
- NPN - Darlington
- Mounting Type
- Surface Mount
- Current - Collector (Ic) (Max)
- 4 A
- Package / Case
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Voltage - Collector Emitter Breakdown (Max)
- 350 V
- Supplier Device Package
- DPAK
- Vce Saturation (Max) @ Ib, Ic
- 1.5V @ 20mA, 2A
- Base Product Number
- NJD35
- Current - Collector Cutoff (Max)
- 50µA
Documentation and references
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