Component information
NJL1302DG
NJL1302DG component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 75 @ 5A, 5V
- Mfr
- onsemi
- Power - Max
- 200 W
- Packaging
- Tube
- Frequency - Transition
- 30MHz
- Part Status
- Active
- Operating Temperature
- -65°C ~ 150°C (TJ)
- Transistor Type
- PNP + Diode (Isolated)
- Mounting Type
- Through Hole
- Current - Collector (Ic) (Max)
- 15 A
- Package / Case
- TO-264-5
- Voltage - Collector Emitter Breakdown (Max)
- 260 V
- Supplier Device Package
- TO-264-5
- Vce Saturation (Max) @ Ib, Ic
- 3V @ 1A, 10A
- Base Product Number
- NJL1302
- Current - Collector Cutoff (Max)
- 50µA (ICBO)
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ