Component information
NJW1302G
NJW1302G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 75 @ 3A, 5V
- Mfr
- onsemi
- Power - Max
- 200 W
- Packaging
- Tube
- Frequency - Transition
- 30MHz
- Part Status
- Active
- Operating Temperature
- -65°C ~ 150°C (TJ)
- Transistor Type
- PNP
- Mounting Type
- Through Hole
- Current - Collector (Ic) (Max)
- 15 A
- Package / Case
- TO-3P-3, SC-65-3
- Voltage - Collector Emitter Breakdown (Max)
- 250 V
- Supplier Device Package
- TO-3P-3L
- Vce Saturation (Max) @ Ib, Ic
- 600mV @ 800mA, 8A
- Base Product Number
- NJW1302
- Current - Collector Cutoff (Max)
- 50µA (ICBO)
Documentation and references
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