Component information
NJW44H11G
NJW44H11G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 80 @ 4A, 2V
- Mfr
- onsemi
- Power - Max
- 120 W
- Packaging
- Tube
- Frequency - Transition
- 85MHz
- Part Status
- Active
- Operating Temperature
- -65°C ~ 150°C (TJ)
- Transistor Type
- NPN
- Mounting Type
- Through Hole
- Current - Collector (Ic) (Max)
- 10 A
- Package / Case
- TO-3P-3, SC-65-3
- Voltage - Collector Emitter Breakdown (Max)
- 80 V
- Supplier Device Package
- TO-3P-3L
- Vce Saturation (Max) @ Ib, Ic
- 1V @ 400mA, 8A
- Base Product Number
- NJW44
- Current - Collector Cutoff (Max)
- 10µA
Documentation and references
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