Component information
NJX1675PDR2G
onsemi NJX1675PDR2G: Bipolar Transistor Arrays. Package / Case: 8-SOIC (0.154", 3.90mm Width). Supplier Device Package: 8-SOIC.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
- Manufacturer
- onsemi
- Part Status
- Obsolete
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 180 @ 1A, 2V
- Power - Max
- 2W
- Frequency - Transition
- 100MHz, 120MHz
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Transistor Type
- 1 NPN, 1 PNP
- Current - Collector (Ic) (Max)
- 3A
- Voltage - Collector Emitter Breakdown (Max)
- 30V
- Vce Saturation (Max) @ Ib, Ic
- 115mV @ 200mA, 2A / 170mV @ 200mA, 2A
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package
- 8-SOIC
- Packaging
- Tape & Reel (TR)
- Base Product Number
- NJX16
Documentation and references
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