NP100P06PDG-E1-AY

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Renesas Electronics Corporation

Part Status

Active

Gate Charge (Qg) (Max) @ Vgs

300 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

15000 pF @ 10 V

Power Dissipation (Max)

1.8W (Ta), 200W (Tc)

FET Type

P-Channel

Operating Temperature

175°C (TJ)

Technology

MOSFET (Metal Oxide)

Grade

Automotive

Drain to Source Voltage (Vdss)

60 V

Qualification

AEC-Q101

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Mounting Type

Surface Mount

Supplier Device Package

TO-263

Package / Case

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

NP100P06