Component information
NP50P06SDG-E1-AY
Renesas Electronics Corporation NP50P06SDG-E1-AY: Single FETs, MOSFETs. Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63. Supplier Device Package: TO-252 (MP-3ZK).
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Renesas Electronics Corporation
- Part Status
- Active
- Gate Charge (Qg) (Max) @ Vgs
- 100 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds
- 5000 pF @ 10 V
- Power Dissipation (Max)
- 1.2W (Ta), 84W (Tc)
- Operating Temperature
- 175°C (TJ)
- FET Type
- P-Channel
- Grade
- Automotive
- Technology
- MOSFET (Metal Oxide)
- Qualification
- AEC-Q101
- Drain to Source Voltage (Vdss)
- 60 V
- Current - Continuous Drain (Id) @ 25°C
- 50A (Tc)
- Rds On (Max) @ Id, Vgs
- 16.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Mounting Type
- Surface Mount
- Supplier Device Package
- TO-252 (MP-3ZK)
- Package / Case
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
Documentation and references
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