NP75P04YLG-E1-AY

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Renesas Electronics Corporation

Part Status

Active

Gate Charge (Qg) (Max) @ Vgs

140 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4800 pF @ 25 V

Power Dissipation (Max)

1W (Ta), 138W (Tc)

FET Type

P-Channel

Operating Temperature

175°C (TJ)

Technology

MOSFET (Metal Oxide)

Grade

Automotive

Drain to Source Voltage (Vdss)

40 V

Qualification

AEC-Q101

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

9.7mOhm @ 37.5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Mounting Type

Surface Mount

Supplier Device Package

8-HSON

Package / Case

8-SMD, Flat Lead Exposed Pad

Packaging

Tape & Reel (TR); Cut Tape (CT)