Component information
NSB1011XV6T5
NSB1011XV6T5 component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays, Pre-Biased
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays, Pre-Biased
- Resistor - Emitter Base (R2)
- 10kOhms
- Manufacturer
- onsemi
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 35 @ 5mA, 10V / 80 @ 5mA, 10V
- Packaging
- Bulk
- Vce Saturation (Max) @ Ib, Ic
- 250mV @ 300µA, 10mA
- Part Status
- Discontinued at DigiKey
- Current - Collector Cutoff (Max)
- 100nA
- Transistor Type
- 2 NPN - Pre-Biased
- Power - Max
- 357mW
- Current - Collector (Ic) (Max)
- 100mA
- Mounting Type
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Package / Case
- SOT-563, SOT-666
- Resistor - Base (R1)
- 10kOhms, 2.2kOhms
- Supplier Device Package
- SOT-563
Documentation and references
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