Component information
NSB1706DMW5T1G
NSB1706DMW5T1G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays, Pre-Biased
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays, Pre-Biased
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 80 @ 5mA, 10V
- Manufacturer
- onsemi
- Vce Saturation (Max) @ Ib, Ic
- 250mV @ 1mA, 10mA
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Current - Collector Cutoff (Max)
- 500nA
- Part Status
- Active
- Power - Max
- 187mW
- Transistor Type
- 2 NPN - Pre-Biased (Dual)
- Mounting Type
- Surface Mount
- Current - Collector (Ic) (Max)
- 100mA
- Package / Case
- 5-TSSOP, SC-70-5, SOT-353
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Supplier Device Package
- SC-88A (SC-70-5/SOT-353)
- Resistor - Base (R1)
- 4.7kOhms
- Base Product Number
- NSB1706
- Resistor - Emitter Base (R2)
- 47kOhms
Documentation and references
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