Component information
NSB9435T1
NSB9435T1 component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single, Pre-Biased Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single, Pre-Biased Bipolar Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 125 @ 800mA, 1V
- Manufacturer
- onsemi
- Vce Saturation (Max) @ Ib, Ic
- 210mV @ 20mA, 800mA
- Packaging
- Bulk
- Frequency - Transition
- 110 MHz
- Part Status
- Obsolete
- Power - Max
- 3 W
- Transistor Type
- PNP - Pre-Biased
- Mounting Type
- Surface Mount
- Current - Collector (Ic) (Max)
- 3 A
- Package / Case
- TO-261-4, TO-261AA
- Voltage - Collector Emitter Breakdown (Max)
- 30 V
- Supplier Device Package
- SOT-223 (TO-261)
- Resistors Included
- R1 Only
- Base Product Number
- NSB9435
- Resistor - Base (R1)
- 10 kOhms
Documentation and references
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