Component information
NSBA113EDXV6T1G
onsemi NSBA113EDXV6T1G: Bipolar Transistor Arrays, Pre-Biased. Package / Case: 6-TSSOP, SC-88, SOT-363. Supplier Device Package: SC-88/SC70-6/SOT-363.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays, Pre-Biased
- Manufacturer
- onsemi
- Part Status
- Active
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 3 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic
- 250mV @ 5mA, 10mA
- Current - Collector Cutoff (Max)
- 500nA
- Power - Max
- 250mW
- Transistor Type
- 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)
- 100mA
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Resistor - Base (R1)
- 1kOhms
- Resistor - Emitter Base (R2)
- 1kOhms
- Mounting Type
- Surface Mount
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Supplier Device Package
- SC-88/SC70-6/SOT-363
- Packaging
- Tape & Reel (TR)
- Base Product Number
- NSBA113
Documentation and references
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