Component information
NSBA123YMXWTBG
onsemi NSBA123YMXWTBG: Single, Pre-Biased Bipolar Transistors. Package / Case: 3-XFDFN. Supplier Device Package: 3-XDFNW (1x1).
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single, Pre-Biased Bipolar Transistors
- Manufacturer
- onsemi
- Series
- NSBAMXW
- Part Status
- Active
- Resistor - Base (R1)
- 2.2 kOhms
- Resistor - Emitter Base (R2)
- 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 35 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic
- 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)
- 500nA
- Transistor Type
- PNP - Pre-Biased
- Power - Max
- 450 mW
- Current - Collector (Ic) (Max)
- 100 mA
- Voltage - Collector Emitter Breakdown (Max)
- 50 V
- Resistors Included
- R1 and R2
- Mounting Type
- Surface Mount, Wettable Flank
- Package / Case
- 3-XFDFN
- Supplier Device Package
- 3-XDFNW (1x1)
- Packaging
- Bulk
Documentation and references
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