Component information
NSM80100MT1G
NSM80100MT1G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 120 @ 10mA, 1V
- Mfr
- onsemi
- Power - Max
- 270 mW
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Frequency - Transition
- 150MHz
- Part Status
- Obsolete
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Transistor Type
- PNP
- Mounting Type
- Surface Mount
- Current - Collector (Ic) (Max)
- 500 mA
- Package / Case
- SC-74, SOT-457
- Voltage - Collector Emitter Breakdown (Max)
- 80 V
- Supplier Device Package
- SC-74
- Vce Saturation (Max) @ Ib, Ic
- 250mV @ 10mA, 100mA
- Base Product Number
- NSM80100
- Current - Collector Cutoff (Max)
- 100nA
Documentation and references
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