Component information
NSS12100XV6T1G
NSS12100XV6T1G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Mfr
- onsemi
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 100 @ 500mA, 2V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Power - Max
- 500 mW
- Part Status
- Active
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Transistor Type
- PNP
- Mounting Type
- Surface Mount
- Current - Collector (Ic) (Max)
- 1 A
- Package / Case
- SOT-563, SOT-666
- Voltage - Collector Emitter Breakdown (Max)
- 12 V
- Supplier Device Package
- SOT-563
- Vce Saturation (Max) @ Ib, Ic
- 440mV @ 100mA, 1A
- Base Product Number
- NSS12100
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ