Component information
NSS20101JT1G
NSS20101JT1G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 200 @ 100mA, 2V
- Mfr
- onsemi
- Power - Max
- 300 mW
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Frequency - Transition
- 350MHz
- Part Status
- Obsolete
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Transistor Type
- NPN
- Mounting Type
- Surface Mount
- Current - Collector (Ic) (Max)
- 1 A
- Package / Case
- SC-89, SOT-490
- Voltage - Collector Emitter Breakdown (Max)
- 20 V
- Supplier Device Package
- SC-89-3
- Vce Saturation (Max) @ Ib, Ic
- 220mV @ 100mA, 1A
- Base Product Number
- NSS20101
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
Documentation and references
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