Component information
NSS40300DDR2G
NSS40300DDR2G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 180 @ 1A, 2V
- Manufacturer
- onsemi
- Power - Max
- 653mW
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Frequency - Transition
- 100MHz
- Part Status
- Active
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Transistor Type
- 2 PNP (Dual)
- Mounting Type
- Surface Mount
- Current - Collector (Ic) (Max)
- 3A
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Voltage - Collector Emitter Breakdown (Max)
- 40V
- Supplier Device Package
- 8-SOIC
- Vce Saturation (Max) @ Ib, Ic
- 170mV @ 200mA, 2A
- Base Product Number
- NSS40300
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
Documentation and references
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