Component information
NST4617MX2T5G
NST4617MX2T5G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 120 @ 1mA, 6V
- Mfr
- onsemi
- Power - Max
- 166 mW
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Frequency - Transition
- 112MHz
- Part Status
- Active
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Transistor Type
- NPN
- Mounting Type
- Surface Mount
- Current - Collector (Ic) (Max)
- 100 mA
- Package / Case
- 3-XFDFN
- Voltage - Collector Emitter Breakdown (Max)
- 50 V
- Supplier Device Package
- 3-X2DFN (1x0.6)
- Vce Saturation (Max) @ Ib, Ic
- 400mV @ 5mA, 60mA
- Base Product Number
- NST4617
- Current - Collector Cutoff (Max)
- 500nA (ICBO)
Documentation and references
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