Component information
NST817CMTWFTBG
NST817CMTWFTBG component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Mfr
- onsemi
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 250 @ 100mA, 1V
- Packaging
- Cut Tape (CT); Digi-Reel®; Bulk
- Power - Max
- 350 mW
- Part Status
- Active
- Frequency - Transition
- 180MHz
- Transistor Type
- NPN
- Operating Temperature
- -65°C ~ 150°C (TJ)
- Current - Collector (Ic) (Max)
- 500 mA
- Mounting Type
- Surface Mount, Wettable Flank
- Voltage - Collector Emitter Breakdown (Max)
- 45 V
- Package / Case
- 3-XFDFN
- Vce Saturation (Max) @ Ib, Ic
- 700mV @ 50mA, 500mA
- Supplier Device Package
- 3-XDFNW (1x1)
Documentation and references
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