Component information
NSTB60BDW1T1
NSTB60BDW1T1 component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays, Pre-Biased
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays, Pre-Biased
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 80 @ 5mA, 10V / 120 @ 5mA, 10V
- Manufacturer
- onsemi
- Vce Saturation (Max) @ Ib, Ic
- 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA
- Packaging
- Tape & Reel (TR)
- Current - Collector Cutoff (Max)
- 500nA
- Part Status
- Obsolete
- Frequency - Transition
- 140MHz
- Transistor Type
- 1 NPN Pre-Biased, 1 PNP
- Power - Max
- 250mW
- Current - Collector (Ic) (Max)
- 150mA
- Mounting Type
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Resistor - Base (R1)
- 22kOhms
- Supplier Device Package
- SC-88/SC70-6/SOT-363
- Resistor - Emitter Base (R2)
- 47kOhms
- Base Product Number
- NSTB60
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ