Component information
NSV30100LT1G
NSV30100LT1G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 100 @ 500mA, 2V
- Mfr
- onsemi
- Power - Max
- 710 mW
- Packaging
- Tape & Reel (TR)
- Frequency - Transition
- 100MHz
- Part Status
- Obsolete
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Transistor Type
- PNP
- Grade
- Automotive
- Current - Collector (Ic) (Max)
- 1 A
- Qualification
- AEC-Q101
- Voltage - Collector Emitter Breakdown (Max)
- 30 V
- Mounting Type
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic
- 650mV @ 200mA, 2A
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Current - Collector Cutoff (Max)
- 100nA
- Supplier Device Package
- SOT-23-3 (TO-236)
Documentation and references
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