Component information
NSVEMX1DXV6T1G
NSVEMX1DXV6T1G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 120 @ 1mA, 6V
- Manufacturer
- onsemi
- Power - Max
- 500mW
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Frequency - Transition
- 180MHz
- Part Status
- Active
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Transistor Type
- 2 NPN (Dual)
- Mounting Type
- Surface Mount
- Current - Collector (Ic) (Max)
- 100mA
- Package / Case
- SOT-563, SOT-666
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Supplier Device Package
- SOT-563
- Vce Saturation (Max) @ Ib, Ic
- 400mV @ 5mA, 50mA
- Base Product Number
- NSVEMX1
- Current - Collector Cutoff (Max)
- 500nA (ICBO)
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ