Component information
NSVMSD601-RT1G
NSVMSD601-RT1G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 210 @ 2mA, 10V
- Mfr
- onsemi
- Power - Max
- 200 mW
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Grade
- Automotive
- Part Status
- Active
- Qualification
- AEC-Q101
- Transistor Type
- NPN
- Mounting Type
- Surface Mount
- Current - Collector (Ic) (Max)
- 100 mA
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Voltage - Collector Emitter Breakdown (Max)
- 50 V
- Supplier Device Package
- SC-59
- Vce Saturation (Max) @ Ib, Ic
- 500mV @ 10mA, 100mA
- Base Product Number
- NSVMSD601
- Current - Collector Cutoff (Max)
- 100nA
Documentation and references
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