Component information
NSVMUN5312DW1T2G
NSVMUN5312DW1T2G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays, Pre-Biased
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays, Pre-Biased
- Vce Saturation (Max) @ Ib, Ic
- 250mV @ 300µA, 10mA
- Manufacturer
- onsemi
- Current - Collector Cutoff (Max)
- 500nA
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Power - Max
- 250mW
- Part Status
- Active
- Grade
- Automotive
- Transistor Type
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Qualification
- AEC-Q101
- Current - Collector (Ic) (Max)
- 100mA
- Mounting Type
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Resistor - Base (R1)
- 22kOhms
- Supplier Device Package
- SC-88/SC70-6/SOT-363
- Resistor - Emitter Base (R2)
- 22kOhms
- Base Product Number
- MUN5312
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 60 @ 5mA, 10V
Documentation and references
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