Component information
NSVT5401MR6T1G
onsemi NSVT5401MR6T1G: Bipolar Transistor Arrays. Package / Case: SOT-23-6 Thin, TSOT-23-6. Supplier Device Package: TSOT-23-6.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
- Manufacturer
- onsemi
- Part Status
- Active
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 60 @ 10mA, 5V
- Power - Max
- 700mW
- Frequency - Transition
- 300MHz
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Transistor Type
- 2 PNP
- Grade
- Automotive
- Current - Collector (Ic) (Max)
- 600mA
- Qualification
- AEC-Q101
- Voltage - Collector Emitter Breakdown (Max)
- 150V
- Vce Saturation (Max) @ Ib, Ic
- 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)
- 50nA (ICBO)
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package
- TSOT-23-6
- Packaging
- Bulk
Documentation and references
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