Component information
NSVT5551DW1T1G
onsemi NSVT5551DW1T1G: Bipolar Transistor Arrays. Package / Case: 6-TSSOP, SC-88, SOT-363. Supplier Device Package: SC-88/SC70-6/SOT-363.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
- Manufacturer
- onsemi
- Part Status
- Active
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 80 @ 10mA, 5V
- Power - Max
- 200mW
- Frequency - Transition
- 300MHz
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Transistor Type
- 2 NPN
- Grade
- Automotive
- Current - Collector (Ic) (Max)
- 200mA
- Qualification
- AEC-Q101
- Voltage - Collector Emitter Breakdown (Max)
- 160V
- Vce Saturation (Max) @ Ib, Ic
- 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)
- 50nA (ICBO)
- Mounting Type
- Surface Mount
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Supplier Device Package
- SC-88/SC70-6/SOT-363
- Packaging
- Bulk
Documentation and references
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