Component information
NSVT856MTWFTBG
onsemi NSVT856MTWFTBG: Single Bipolar Transistors. Package / Case: 3-XFDFN. Supplier Device Package: 3-XDFNW (1x1).
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- Mfr
- onsemi
- Part Status
- Active
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 220 @ 2mA, 5V
- Power - Max
- 650 mW
- Frequency - Transition
- 100MHz
- Operating Temperature
- -65°C ~ 150°C (TJ)
- Transistor Type
- PNP
- Grade
- Automotive
- Current - Collector (Ic) (Max)
- 100 mA
- Qualification
- AEC-Q101
- Voltage - Collector Emitter Breakdown (Max)
- 65 V
- Vce Saturation (Max) @ Ib, Ic
- 900mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)
- 15nA (ICBO)
- Mounting Type
- Surface Mount, Wettable Flank
- Package / Case
- 3-XFDFN
- Supplier Device Package
- 3-XDFNW (1x1)
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
Documentation and references
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