Component information
NTB25P06
NTB25P06 component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Mfr
- onsemi
- Gate Charge (Qg) (Max) @ Vgs
- 50 nC @ 10 V
- Packaging
- Tube
- Vgs (Max)
- ±15V
- Part Status
- Obsolete
- Input Capacitance (Ciss) (Max) @ Vds
- 1680 pF @ 25 V
- FET Type
- P-Channel
- Power Dissipation (Max)
- 120W (Tj)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Drain to Source Voltage (Vdss)
- 60 V
- Mounting Type
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C
- 27.5A (Ta)
- Supplier Device Package
- D2PAK
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Rds On (Max) @ Id, Vgs
- 82mOhm @ 25A, 10V
- Base Product Number
- NTB25
Documentation and references
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