NTBG060N090SC1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

onsemi

Part Status

Active

Vgs(th) (Max) @ Id

4.3V @ 5mA

Gate Charge (Qg) (Max) @ Vgs

88 nC @ 15 V

Vgs (Max)

+19V, -10V

Input Capacitance (Ciss) (Max) @ Vds

1800 pF @ 450 V

FET Type

N-Channel

Power Dissipation (Max)

3.6W (Ta), 211W (Tc)

Technology

SiCFET (Silicon Carbide)

Operating Temperature

-55°C ~ 175°C (TJ)

Drain to Source Voltage (Vdss)

900 V

Current - Continuous Drain (Id) @ 25°C

5.8A (Ta), 44A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V

Rds On (Max) @ Id, Vgs

84mOhm @ 20A, 15V

Mounting Type

Surface Mount

Supplier Device Package

D2PAK-7

Package / Case

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

NTBG060