Component information
NTBL023N065M3S
NTBL023N065M3S component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 4V @ 10mA
- Mfr
- onsemi
- Gate Charge (Qg) (Max) @ Vgs
- 69 nC @ 18 V
- Packaging
- Bulk
- Vgs (Max)
- +22V, -8V
- Part Status
- Active
- Input Capacitance (Ciss) (Max) @ Vds
- 1950 pF @ 400 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 312W (Tc)
- Technology
- SiCFET (Silicon Carbide)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Drain to Source Voltage (Vdss)
- 650 V
- Mounting Type
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C
- 77A (Tc)
- Supplier Device Package
- 8-HPSOF
- Drive Voltage (Max Rds On, Min Rds On)
- 15V, 18V
- Package / Case
- 8-PowerSFN
- Rds On (Max) @ Id, Vgs
- 32.6mOhm @ 20A, 18V
Documentation and references
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