Component information

NTD18N06LT4G

NTD18N06LT4G component information and product attributes.

Product information

Manufacturer
onsemi
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Vgs(th) (Max) @ Id
2V @ 250µA
Mfr
onsemi
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 5 V
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)
±15V
Part Status
Active
Input Capacitance (Ciss) (Max) @ Vds
675 pF @ 25 V
FET Type
N-Channel
Power Dissipation (Max)
2.1W (Ta), 55W (Tj)
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)
60 V
Mounting Type
Surface Mount
Current - Continuous Drain (Id) @ 25°C
18A (Ta)
Supplier Device Package
DPAK
Drive Voltage (Max Rds On, Min Rds On)
5V
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs
65mOhm @ 9A, 5V
Base Product Number
NTD18

Documentation and references

Manufacturer datasheet ↗

Distributor reference ↗

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