Component information

NTD23N03R

NTD23N03R component information and product attributes.

Product information

Manufacturer
onsemi
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Vgs(th) (Max) @ Id
2V @ 250µA
Mfr
onsemi
Gate Charge (Qg) (Max) @ Vgs
3.76 nC @ 4.5 V
Packaging
Tube
Vgs (Max)
±20V
Part Status
Obsolete
Input Capacitance (Ciss) (Max) @ Vds
225 pF @ 20 V
FET Type
N-Channel
Power Dissipation (Max)
1.14W (Ta), 22.3W (Tc)
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
25 V
Mounting Type
Surface Mount
Current - Continuous Drain (Id) @ 25°C
3.8A (Ta), 17.1A (Tc)
Supplier Device Package
DPAK
Drive Voltage (Max Rds On, Min Rds On)
4V, 5V
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs
45mOhm @ 6A, 10V
Base Product Number
NTD23

Documentation and references

Manufacturer datasheet ↗

Distributor reference ↗

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