Component information
NTD3817N-1G
NTD3817N-1G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Mfr
- onsemi
- Gate Charge (Qg) (Max) @ Vgs
- 10.5 nC @ 4.5 V
- Packaging
- Tube
- Vgs (Max)
- ±16V
- Part Status
- Obsolete
- Input Capacitance (Ciss) (Max) @ Vds
- 702 pF @ 12 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 1.2W (Ta), 25.9W (Tc)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Drain to Source Voltage (Vdss)
- 16 V
- Mounting Type
- Through Hole
- Current - Continuous Drain (Id) @ 25°C
- 7.6A (Ta), 34.5A (Tc)
- Supplier Device Package
- IPAK
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Package / Case
- TO-251-3 Short Leads, IPAK, TO-251AA
- Rds On (Max) @ Id, Vgs
- 13.9mOhm @ 15A, 10V
- Base Product Number
- NTD38
Documentation and references
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