Component information
NTD5802NT4G
NTD5802NT4G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 3.5V @ 250µA
- Mfr
- onsemi
- Gate Charge (Qg) (Max) @ Vgs
- 100 nC @ 10 V
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Vgs (Max)
- ±20V
- Part Status
- Obsolete
- Input Capacitance (Ciss) (Max) @ Vds
- 5025 pF @ 25 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 2.5W (Ta), 93.75W (Tc)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Drain to Source Voltage (Vdss)
- 40 V
- Mounting Type
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C
- 16.4A (Ta), 101A (Tc)
- Supplier Device Package
- DPAK
- Drive Voltage (Max Rds On, Min Rds On)
- 5V, 10V
- Package / Case
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Rds On (Max) @ Id, Vgs
- 4.4mOhm @ 50A, 10V
- Base Product Number
- NTD5802
Documentation and references
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