Component information
NTGD4167CT1G
NTGD4167CT1G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Vgs(th) (Max) @ Id
- 1.5V @ 250µA
- Manufacturer
- onsemi
- Gate Charge (Qg) (Max) @ Vgs
- 5.5nC @ 4.5V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 295pF @ 15V
- Part Status
- Active
- Power - Max
- 900mW
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Configuration
- N and P-Channel
- Mounting Type
- Surface Mount
- FET Feature
- Logic Level Gate
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Drain to Source Voltage (Vdss)
- 30V
- Supplier Device Package
- 6-TSOP
- Current - Continuous Drain (Id) @ 25°C
- 2.6A, 1.9A
- Base Product Number
- NTGD4167
- Rds On (Max) @ Id, Vgs
- 90mOhm @ 2.6A, 4.5V
Documentation and references
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