NTH4L028N170M1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

onsemi

Part Status

Active

Vgs(th) (Max) @ Id

4.3V @ 20mA

Gate Charge (Qg) (Max) @ Vgs

200 nC @ 20 V

Vgs (Max)

+25V, -15V

Input Capacitance (Ciss) (Max) @ Vds

4230 pF @ 800 V

FET Type

N-Channel

Power Dissipation (Max)

535W (Tc)

Technology

SiCFET (Silicon Carbide)

Operating Temperature

-55°C ~ 175°C (TJ)

Drain to Source Voltage (Vdss)

1700 V

Current - Continuous Drain (Id) @ 25°C

81A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

20V

Rds On (Max) @ Id, Vgs

40mOhm @ 60A, 20V

Mounting Type

Through Hole

Supplier Device Package

TO-247-4L

Package / Case

TO-247-4

Packaging

Tube

Base Product Number

NTH4L02