Component information
NTHD3101FT1G
NTHD3101FT1G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Gate Charge (Qg) (Max) @ Vgs
- 7.4 nC @ 4.5 V
- Mfr
- onsemi
- Vgs (Max)
- ±8V
- Packaging
- Tape & Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds
- 680 pF @ 10 V
- Part Status
- Obsolete
- FET Feature
- Schottky Diode (Isolated)
- FET Type
- P-Channel
- Power Dissipation (Max)
- 1.1W (Ta)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss)
- 20 V
- Mounting Type
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C
- 3.2A (Tj)
- Supplier Device Package
- ChipFET™
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 4.5V
- Package / Case
- 8-SMD, Flat Leads
- Rds On (Max) @ Id, Vgs
- 80mOhm @ 3.2A, 4.5V
- Base Product Number
- NTHD3101
- Vgs(th) (Max) @ Id
- 1.5V @ 250µA
Documentation and references
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