Component information

NTJS3151PT2G

NTJS3151PT2G component information and product attributes.

Product information

Manufacturer
onsemi
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Vgs(th) (Max) @ Id
1.2V @ 100µA
Mfr
onsemi
Gate Charge (Qg) (Max) @ Vgs
8.6 nC @ 4.5 V
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)
±12V
Part Status
Active
Input Capacitance (Ciss) (Max) @ Vds
850 pF @ 12 V
FET Type
P-Channel
Power Dissipation (Max)
625mW (Ta)
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
12 V
Mounting Type
Surface Mount
Current - Continuous Drain (Id) @ 25°C
2.7A (Ta)
Supplier Device Package
SC-88/SC70-6/SOT-363
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Package / Case
6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs
60mOhm @ 3.3A, 4.5V
Base Product Number
NTJS3151

Documentation and references

Manufacturer datasheet ↗

Distributor reference ↗

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