NTLJD3115PT1G

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

onsemi

Part Status

Active

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.2nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

531pF @ 10V

Power - Max

710mW

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 150°C (TJ)

Configuration

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.3A

Rds On (Max) @ Id, Vgs

100mOhm @ 2A, 4.5V

Mounting Type

Surface Mount

Package / Case

6-WDFN Exposed Pad

Supplier Device Package

6-WDFN (2x2)

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

NTLJD3115