Component information

NTLJF3117PT1G

NTLJF3117PT1G component information and product attributes.

Product information

Manufacturer
onsemi
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Vgs(th) (Max) @ Id
1V @ 250µA
Mfr
onsemi
Gate Charge (Qg) (Max) @ Vgs
6.2 nC @ 4.5 V
Series
µCool™
Vgs (Max)
±8V
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds
531 pF @ 10 V
Part Status
Active
FET Feature
Schottky Diode (Isolated)
FET Type
P-Channel
Power Dissipation (Max)
710mW (Ta)
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
20 V
Mounting Type
Surface Mount
Current - Continuous Drain (Id) @ 25°C
2.3A (Ta)
Supplier Device Package
6-WDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Package / Case
6-WDFN Exposed Pad
Rds On (Max) @ Id, Vgs
100mOhm @ 2A, 4.5V
Base Product Number
NTLJF3117

Documentation and references

Manufacturer datasheet ↗

Distributor reference ↗

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