NTLJF4156NT1G

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

onsemi

Part Status

Active

Gate Charge (Qg) (Max) @ Vgs

6.5 nC @ 4.5 V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

427 pF @ 15 V

FET Feature

Schottky Diode (Isolated)

FET Type

N-Channel

Power Dissipation (Max)

710mW (Ta)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss)

30 V

Current - Continuous Drain (Id) @ 25°C

2.5A (Tj)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

70mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Mounting Type

Surface Mount

Supplier Device Package

6-WDFN (2x2)

Package / Case

6-WDFN Exposed Pad

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

NTLJF4156