Component information

NTLJS1102PTAG

NTLJS1102PTAG component information and product attributes.

Product information

Manufacturer
onsemi
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Vgs(th) (Max) @ Id
720mV @ 250µA
Mfr
onsemi
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 4.5 V
Series
µCool™
Vgs (Max)
±6V
Packaging
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds
1585 pF @ 4 V
Part Status
Obsolete
Power Dissipation (Max)
700mW (Ta)
FET Type
P-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Drain to Source Voltage (Vdss)
8 V
Supplier Device Package
6-WDFN (2x2)
Current - Continuous Drain (Id) @ 25°C
3.7A (Ta)
Package / Case
6-WDFN Exposed Pad
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V
Base Product Number
NTLJS11
Rds On (Max) @ Id, Vgs
36mOhm @ 6.2A, 4.5V

Documentation and references

Manufacturer datasheet ↗

Distributor reference ↗

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