Component information

NTLJS2103PTBG

NTLJS2103PTBG component information and product attributes.

Product information

Manufacturer
onsemi
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Vgs(th) (Max) @ Id
800mV @ 250µA
Mfr
onsemi
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 4.5 V
Series
µCool™
Vgs (Max)
±8V
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds
1157 pF @ 6 V
Part Status
Active
Power Dissipation (Max)
700mW (Ta)
FET Type
P-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Drain to Source Voltage (Vdss)
12 V
Supplier Device Package
6-WDFN (2x2)
Current - Continuous Drain (Id) @ 25°C
3.5A (Ta)
Package / Case
6-WDFN Exposed Pad
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V
Base Product Number
NTLJS2103
Rds On (Max) @ Id, Vgs
40mOhm @ 3A, 4.5V

Documentation and references

Manufacturer datasheet ↗

Distributor reference ↗

Request a quotation

Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.

Prepare an RFQ

Before requesting a quotation

Check the complete part number