NTLJS7D2P02P8ZTAG

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

onsemi

Part Status

Active

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26.7 nC @ 4.5 V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

2790 pF @ 10 V

FET Type

P-Channel

Power Dissipation (Max)

860mW (Ta)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss)

20 V

Current - Continuous Drain (Id) @ 25°C

7.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

9mOhm @ 10A, 4.5V

Mounting Type

Surface Mount

Supplier Device Package

6-PQFN (2x2)

Package / Case

6-PowerWDFN

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

NTLJS7