NTMD3P03R2G

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

onsemi

Part Status

Active

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

750pF @ 24V

Power - Max

730mW

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 150°C (TJ)

Configuration

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

2.34A

Rds On (Max) @ Id, Vgs

85mOhm @ 3.05A, 10V

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOIC

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

NTMD3