Component information
NTMD6N02R2G
NTMD6N02R2G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Vgs(th) (Max) @ Id
- 1.2V @ 250µA
- Manufacturer
- onsemi
- Gate Charge (Qg) (Max) @ Vgs
- 20nC @ 4.5V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 1100pF @ 16V
- Part Status
- Active
- Power - Max
- 730mW
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Configuration
- 2 N-Channel (Dual)
- Mounting Type
- Surface Mount
- FET Feature
- Logic Level Gate
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Drain to Source Voltage (Vdss)
- 20V
- Supplier Device Package
- 8-SOIC
- Current - Continuous Drain (Id) @ 25°C
- 3.92A
- Base Product Number
- NTMD6
- Rds On (Max) @ Id, Vgs
- 35mOhm @ 6A, 4.5V
Documentation and references
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