Component information
NTMFS4H013NFT1G
NTMFS4H013NFT1G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 2.1V @ 250µA
- Mfr
- onsemi
- Gate Charge (Qg) (Max) @ Vgs
- 56 nC @ 10 V
- Packaging
- Tape & Reel (TR)
- Vgs (Max)
- ±20V
- Part Status
- Obsolete
- Input Capacitance (Ciss) (Max) @ Vds
- 3923 pF @ 12 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 2.7W (Ta), 104W (Tc)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- 150°C (TJ)
- Drain to Source Voltage (Vdss)
- 25 V
- Mounting Type
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C
- 43A (Ta), 269A (Tc)
- Supplier Device Package
- 5-DFN (5x6) (8-SOFL)
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Package / Case
- 8-PowerTDFN, 5 Leads
- Rds On (Max) @ Id, Vgs
- 0.9mOhm @ 30A, 10V
- Base Product Number
- NTMFS4
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ