Component information

NTMFS5H630NLT1G

NTMFS5H630NLT1G component information and product attributes.

Product information

Manufacturer
onsemi
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Vgs(th) (Max) @ Id
2V @ 130µA
Mfr
onsemi
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)
±20V
Part Status
Active
Input Capacitance (Ciss) (Max) @ Vds
2540 pF @ 30 V
FET Type
N-Channel
Power Dissipation (Max)
3.1W (Ta), 89W (Tc)
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
60 V
Mounting Type
Surface Mount
Current - Continuous Drain (Id) @ 25°C
22A (Ta), 120A (Tc)
Supplier Device Package
5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package / Case
8-PowerTDFN, 5 Leads
Rds On (Max) @ Id, Vgs
3.1mOhm @ 20A, 10V
Base Product Number
NTMFS5

Documentation and references

Manufacturer datasheet ↗

Distributor reference ↗

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