NTMTSC4D2N10GTXG

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

onsemi

Part Status

Active

Vgs(th) (Max) @ Id

4V @ 450µA

Gate Charge (Qg) (Max) @ Vgs

159 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10450 pF @ 50 V

FET Type

N-Channel

Power Dissipation (Max)

3.9W (Ta), 267W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 175°C (TJ)

Drain to Source Voltage (Vdss)

100 V

Current - Continuous Drain (Id) @ 25°C

21A (Ta), 178A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.2mOhm @ 88A, 10V

Mounting Type

Surface Mount, Wettable Flank

Supplier Device Package

8-TDFNW (8.3x8.4)

Package / Case

8-PowerTDFN

Packaging

Tape & Reel (TR); Cut Tape (CT)